Datasheet IRF9Z24N (International Rectifier) - 5
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Dateiformat / Größe | PDF / 117 Kb |
| Dokumentensprache | Englisch |
Fig 10a. Fig 9. Fig 10b. Fig 11
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Textversion des Dokuments
IRF9Z24N 1 2 RD VDS VGS D.U.T. ) s 9 R p G - m + VDD A ( -10V rrent 6 u Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % n C rai D
Fig 10a.
Switching Time Test Circuit D 3 -I , td(on) tr td(off) tf VGS 10% 0 A 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 C T , C ase T emp era ture (°C) 90%
Fig 9.
Maximum Drain Current Vs. VDS Case Temperature
Fig 10b.
Switching Time Waveforms 1 0 C J )th D = 0 .5 0 (Z 1 e 0 .2 0 0 .1 0 pons s e 0 .0 5 0 .0 2 l R PDM a 0 .0 1 0 . 1 m t S IN G LE P U L S E 1 (T H E R M A L R E S P O N S E ) her t T 2 N otes : 1. D uty fac tor D = t / t 1 2 2. P ea k T = P x Z + T J D M th JC C 0 . 0 1 A 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 t 1 , R e c tan gula r P u ls e D u ra tio n (s ec )
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a.
Switching Time Test Circuit D 3 -I , td(on) tr td(off) tf VGS 10% 0 A 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5 C T , C ase T emp era ture (°C) 90%
Fig 9.
Maximum Drain Current Vs. VDS Case Temperature
Fig 10b.
Switching Time Waveforms 1 0 C J )th D = 0 .5 0 (Z 1 e 0 .2 0 0 .1 0 pons s e 0 .0 5 0 .0 2 l R PDM a 0 .0 1 0 . 1 m t S IN G LE P U L S E 1 (T H E R M A L R E S P O N S E ) her t T 2 N otes : 1. D uty fac tor D = t / t 1 2 2. P ea k T = P x Z + T J D M th JC C 0 . 0 1 A 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 t 1 , R e c tan gula r P u ls e D u ra tio n (s ec )
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case