Datasheet IRF9Z24N (International Rectifier)

PD -9.1484B IRF9Z24N HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = -55V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.175Ω l P-Channel G l Fully Avalanche Rated ID = -12A
Description
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -12 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.5 A IDM Pulsed Drain Current  -48 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy‚ 96 mJ IAR Avalanche Current -7.2 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 3.3 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 8/27/97