Datasheet IRLR024NPbF, IRLU024NPbF (Infineon) - 3

HerstellerInfineon
BeschreibungHEXFET Power MOSFET
Seiten / Seite11 / 3 — VGS. TOP 15V. 12V. 10V. 8.0V. 6.0V. 4.0V. 3.0V. BOTTOM 2.5V. Fig 1. Fig …
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DokumentenspracheEnglisch

VGS. TOP 15V. 12V. 10V. 8.0V. 6.0V. 4.0V. 3.0V. BOTTOM 2.5V. Fig 1. Fig 2. Fig 3. Fig 4

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V Fig 1 Fig 2 Fig 3 Fig 4

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Textversion des Dokuments

IRLR/U024NPbF 100 100
VGS VGS TOP 15V TOP 15V 12V 12V 10V 10V
)
8.0V
)
8.0V 6.0V 6.0V 4.0V 4.0V
nt (A
3.0V 3.0V BOTTOM 2.5V
nt (A
BOTTOM 2.5V
10 urre 10 urre e C ource C ourc -S -S 2.5V 1 1 rain-to rain-to I , D D 2.5V I , D D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25°C T = J 175°C 0.1 A 0.1 A 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 3.0 I D = 18A 17 T J= 25°C 2.5 t (A) n T = 175° J C esistance n R 10 urre 2.0 C e O e urc ourc 1.5 o -S alized) m -S or 1 (N in-to 1.0 rain-to , Dra D 0.5 I (on) V = 1 DS 5V , D DS 20µs PULSE WIDTH R V = 10V 0.1 GS A 0.0 A 2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 GS V , Gate-to-Source Voltage (V) J T , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3