Datasheet IRLR024NPbF, IRLU024NPbF (Infineon) - 5
| Hersteller | Infineon |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 11 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Dateiformat / Größe | PDF / 316 Kb |
| Dokumentensprache | Englisch |
Fig 10a. Fig 9. Fig 10b. Fig 11
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Textversion des Dokuments
IRLR/U024NPbF 20 R V D DS VGS D.U.T. R ) 15 G +-VDD 5V urrent (A Pulse Width ≤ 1 µs 10 Duty Factor ≤ 0.1 % rain C
Fig 10a.
Switching Time Test Circuit I , D D 5 VDS 90% 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 10% VGS
Fig 9.
Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature
Fig 10b.
Switching Time Waveforms 10 ) C thJ D = 0.50 Z ( 1 0.20 se on 0.10 esp 0.05 0.02 l R PDM 0.01 0.1 SINGLE PULSE t erma 1 (THERMAL RESPONSE) h t T 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 A 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 10a.
Switching Time Test Circuit I , D D 5 VDS 90% 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 10% VGS
Fig 9.
Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature
Fig 10b.
Switching Time Waveforms 10 ) C thJ D = 0.50 Z ( 1 0.20 se on 0.10 esp 0.05 0.02 l R PDM 0.01 0.1 SINGLE PULSE t erma 1 (THERMAL RESPONSE) h t T 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 A 0.00001 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5