Datasheet Si9407AEY (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | P-Channel 60-V (D-S), 175 °C MOSFET |
| Seiten / Seite | 5 / 4 — Si9407AEY. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| Dateiformat / Größe | PDF / 102 Kb |
| Dokumentensprache | Englisch |
Si9407AEY. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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Si9407AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 30 0.20 ) Ω 0.15 10 TJ = 175 °C I T D = 3.5 A J = 25 °C 0.10 - On-Resistance ( - Source Current (A) I S DS(on) 0.05 R 0 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.8 50 0.6 40 0.4 I 30 D = 250 µA riance (V) 0.2 a er (W) V w o P 20 GS(th) 0.0 V 10 - 0.2 - 0.4 0 - 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
2 1 Duty Cycle = 0.5 ransient 0.2 e T Notes: 0.1 fectiv 0.1 PDM mal Impedance ed Ef 0.05 t Ther 1 t2 maliz t1 0.02 1. Duty Cycle, D = t2 Nor 2. Per Unit Base = R thJA = 50 °C/W (t) Single Pulse 3. T JM - TA = PDMZthJA 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70742. www.vishay.com Document Number: 70742 4 S09-1341-Rev. E, 13-Jul-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 30 0.20 ) Ω 0.15 10 TJ = 175 °C I T D = 3.5 A J = 25 °C 0.10 - On-Resistance ( - Source Current (A) I S DS(on) 0.05 R 0 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.8 50 0.6 40 0.4 I 30 D = 250 µA riance (V) 0.2 a er (W) V w o P 20 GS(th) 0.0 V 10 - 0.2 - 0.4 0 - 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
2 1 Duty Cycle = 0.5 ransient 0.2 e T Notes: 0.1 fectiv 0.1 PDM mal Impedance ed Ef 0.05 t Ther 1 t2 maliz t1 0.02 1. Duty Cycle, D = t2 Nor 2. Per Unit Base = R thJA = 50 °C/W (t) Single Pulse 3. T JM - TA = PDMZthJA 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70742. www.vishay.com Document Number: 70742 4 S09-1341-Rev. E, 13-Jul-09