Datasheet Si9407AEY (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | P-Channel 60-V (D-S), 175 °C MOSFET |
| Seiten / Seite | 5 / 3 — Si9407AEY. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 102 Kb |
| Dokumentensprache | Englisch |
Si9407AEY. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. On-Resistance vs. Drain Current
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Si9407AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 30 30 VGS = 10 V, 9 V, 8 V, 7 V 6 V TC = - 55 °C 25 5 V 25 25 °C 20 20 150 °C 15 15 ain Current (A) 4 V ain Current (A) - Dr - Dr 10 10 I D I D 5 5 2 V 3 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.20 1500 ) Ω 1200 ( 0.15 Ciss VGS = 4.5 V 900 esistance -R 0.10 VGS = 10 V - On 600 - Capacitance (pF) C DS(on) 0.05 R 300 C C oss rss 0.00 0 0 5 10 15 20 25 30 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 2.0 V V DS = 30 V GS = 10 V 8 I I D = 3.5 A D = 3.5 A 1.5 oltage (V) V 6 ed) 1.0 maliz - On-Resistance 4 (Nor (on) - Gate-to-Source DSR 0.5 GS 2 V 0 0.0 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 175 Q T g - Total Gate Charge (nC) J - Junction Temperature ( °C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 70742 www.vishay.com S09-1341-Rev. E, 13-Jul-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 30 30 VGS = 10 V, 9 V, 8 V, 7 V 6 V TC = - 55 °C 25 5 V 25 25 °C 20 20 150 °C 15 15 ain Current (A) 4 V ain Current (A) - Dr - Dr 10 10 I D I D 5 5 2 V 3 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.20 1500 ) Ω 1200 ( 0.15 Ciss VGS = 4.5 V 900 esistance -R 0.10 VGS = 10 V - On 600 - Capacitance (pF) C DS(on) 0.05 R 300 C C oss rss 0.00 0 0 5 10 15 20 25 30 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 2.0 V V DS = 30 V GS = 10 V 8 I I D = 3.5 A D = 3.5 A 1.5 oltage (V) V 6 ed) 1.0 maliz - On-Resistance 4 (Nor (on) - Gate-to-Source DSR 0.5 GS 2 V 0 0.0 0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 175 Q T g - Total Gate Charge (nC) J - Junction Temperature ( °C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 70742 www.vishay.com S09-1341-Rev. E, 13-Jul-09 3