Datasheet Si2399DS (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | P-Channel 20-V (D-S) MOSFET |
| Seiten / Seite | 10 / 3 — Si2399DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 214 Kb |
| Dokumentensprache | Englisch |
Si2399DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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Si2399DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 5 V = 5 V thru 3 V GS V = 2.5 V 4 15 GS ) (A ) (A 3 rrent u rrent C 10 u n C rai n D rai 2 - V = 2 V D GS T = 25 °C I D - C I D 5 1 T = 125 °C C V = 1.5 V GS T = - 55 °C 0 0 C 0 0.5 1 1.5 2 0 0.5 1 1.5 2 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS
Output Characteristics Transfer Characteristics
0.08 1400 V = 2.5 V GS 0.06 1050 ) F (p Ciss ce an 0.04 V = 4.5 V GS 700 -Resistance (Ω) acit n O V = 10 V ap GS - C ) n o C - DS( 0.02 R 350 Coss Crss 0.00 0 0 5 10 15 20 0 5 10 15 20 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current and Gate Voltage Capacitance
5 1.5 I = 5.1 A D V = 10 V GS 4 (V) V = 5 V DS 1.3 e c tage n ta 3 ) is s e V = 10 V lized DS -R a 1.1 ource Vol n S rm 2 -O to- V = 16 V ) DS n (No o ate- DS(R G 0.9 - 1 V = 4.5 V GS GSV 0 0.7 0 3 6 9 12 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 67343 www.vishay.com S11-0239-Rev. A, 14-Feb-11 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 5 V = 5 V thru 3 V GS V = 2.5 V 4 15 GS ) (A ) (A 3 rrent u rrent C 10 u n C rai n D rai 2 - V = 2 V D GS T = 25 °C I D - C I D 5 1 T = 125 °C C V = 1.5 V GS T = - 55 °C 0 0 C 0 0.5 1 1.5 2 0 0.5 1 1.5 2 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS
Output Characteristics Transfer Characteristics
0.08 1400 V = 2.5 V GS 0.06 1050 ) F (p Ciss ce an 0.04 V = 4.5 V GS 700 -Resistance (Ω) acit n O V = 10 V ap GS - C ) n o C - DS( 0.02 R 350 Coss Crss 0.00 0 0 5 10 15 20 0 5 10 15 20 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current and Gate Voltage Capacitance
5 1.5 I = 5.1 A D V = 10 V GS 4 (V) V = 5 V DS 1.3 e c tage n ta 3 ) is s e V = 10 V lized DS -R a 1.1 ource Vol n S rm 2 -O to- V = 16 V ) DS n (No o ate- DS(R G 0.9 - 1 V = 4.5 V GS GSV 0 0.7 0 3 6 9 12 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 67343 www.vishay.com S11-0239-Rev. A, 14-Feb-11 3