Datasheet Vishay Si2399DS-T1-GE3 — Datenblatt

Si2399DS
Vishay Siliconix P-Channel 20-V (D-S) MOSFET
FEATURES MOSFET PRODUCT SUMMARY
RDS(on) () ID (A)a 0.034 at VGS = -10 V -6e 0.045 at VGS = -4.5 V -6e 0.067 at VGS = -2.5 V -5.2 VDS (V)
-20 Qg (Typ.)
10 nC • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switch
• PA Switch
• DC/DC Converters
TO-236
(SOT-23) G 1
3 S D 2 Top View
Si2399DS (O1)*
* Marking Code
Ordering Information: Si2399DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Symbol …