Datasheet BC847, BC547 (NXP) - 7
| Hersteller | NXP |
| Beschreibung | 45 V, 100 mA NPN general-purpose transistors |
| Seiten / Seite | 15 / 7 — NXP Semiconductors. BC847/BC547 series. 45 V, 100 mA NPN general-purpose … |
| Dateiformat / Größe | PDF / 100 Kb |
| Dokumentensprache | Englisch |
NXP Semiconductors. BC847/BC547 series. 45 V, 100 mA NPN general-purpose transistors. Fig 1
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NXP Semiconductors BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors
mgt723 mgt724 400 1200 VBE h (mV) FE 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 1. Selection A: DC current gain as a function of Fig 2. Selection A: Base-emitter voltage as a collector current; typical values function of collector current; typical values
mgt725 mgt726 103 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 3. Selection A: Collector-emitter saturation Fig 4. Selection A: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 7 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents
mgt723 mgt724 400 1200 VBE h (mV) FE 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) VCE = 5 V VCE = 5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 1. Selection A: DC current gain as a function of Fig 2. Selection A: Base-emitter voltage as a collector current; typical values function of collector current; typical values
mgt725 mgt726 103 1200 VBEsat V (mV) CEsat (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 10 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 3. Selection A: Collector-emitter saturation Fig 4. Selection A: Base-emitter saturation voltage voltage as a function of collector current; as a function of collector current; typical typical values values
BC847_BC547_SER_7 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 07 — 10 December 2008 7 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Revision history 11. Legal information 11.1 Data sheet status 11.2 Definitions 11.3 Disclaimers 11.4 Trademarks 12. Contact information 13. Contents