Datasheet SMBT3906...MMBT3906 (Infineon) - 3
| Hersteller | Infineon |
| Beschreibung | PNP Silicon Switching Transistors |
| Seiten / Seite | 12 / 3 — SMBT3906...MMBT3906. Electrical Characteristics. Parameter. Symbol. … |
| Revision | 01_01 |
| Dateiformat / Größe | PDF / 908 Kb |
| Dokumentensprache | Englisch |
SMBT3906...MMBT3906. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. AC Characteristics
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SMBT3906...MMBT3906 Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. AC Characteristics
Transition frequency fT 250 - - MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb - - 3.5 pF VCB = 5 V, f = 1 MHz Emitter-base capacitance Ceb - - 10 VEB = 0.5 V, f = 1 MHz Delay time td - - 35 ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time tr - - 35 VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time tstg - - 225 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time tf - - 75 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure F - - 4 dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 2012-08-21
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. AC Characteristics
Transition frequency fT 250 - - MHz IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb - - 3.5 pF VCB = 5 V, f = 1 MHz Emitter-base capacitance Ceb - - 10 VEB = 0.5 V, f = 1 MHz Delay time td - - 35 ns VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time tr - - 35 VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time tstg - - 225 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time tf - - 75 VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure F - - 4 dB IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 2012-08-21