Datasheet SMBT3906...MMBT3906 (Infineon)

HerstellerInfineon
BeschreibungPNP Silicon Switching Transistors
Seiten / Seite12 / 1 — SMBT3906...MMBT3906. PNP Silicon Switching Transistors. Type. Marking. …
Revision01_01
Dateiformat / GrößePDF / 908 Kb
DokumentenspracheEnglisch

SMBT3906...MMBT3906. PNP Silicon Switching Transistors. Type. Marking. Pin Configuration. Package. Maximum Ratings Parameter. Symbol

Datasheet SMBT3906...MMBT3906 Infineon, Revision: 01_01

Modelllinie für dieses Datenblatt

Textversion des Dokuments

SMBT3906...MMBT3906 PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package • Complementary types: SMBT3904...MMBT3904 (NPN) • SMBT3906S/ U: for orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT3906/ MMBT3906 s2A 1=B 2=E 3=C - - - SOT23 SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings Parameter Symbol Value Unit
Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC 200 mA Total power dissipation- Ptot mW TS ≤ 71°C, SOT23, MMBT3906 330 TS ≤ 115°C, SOT363, MMBT3906S 250 TS ≤ 107°C, SC74, MMBT3906U 330 Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 1 2012-08-21