Datasheet LTC4100 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | Smart Battery Charger Controller |
| Seiten / Seite | 30 / 3 — e lecTrical characTerisTics The. denotes the specifications which apply … |
| Dateiformat / Größe | PDF / 328 Kb |
| Dokumentensprache | Englisch |
e lecTrical characTerisTics The. denotes the specifications which apply over the full operating
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LTC4100
e lecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDCIN = 20V, VDD = 3.3V, VBAT = 12V unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Sense Amplifier, CA1
Input Bias Current into BAT Pin 11.66 µA CMSL CA1/I1 Input Common Mode Low ● 0 V CMSH CA1/I1 Input Common Mode High VDCIN ≤ 28V ● VCLN–0.2 V
Current Comparators ICMP and IREV
ITMAX Maximum Current Sense Threshold (VCSP–VBAT) VITH = 2.5V ● 140 165 200 mV ITREV Reverse Current Threshold (VCSP–VBAT) – 30 mV
Current Sense Amplifier, CA2
Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V –40 µA Sink Current Measured at ITH, VITH = 1.4V 40 µA
Current Limit Amplifier
Transconductance 1.5 mmho VCLP Current Limit Threshold ● 93 100 107 mV ICLN CLN Input Bias Current 100 nA
Voltage Error Amplifier, EA
Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 µA OVSD Overvoltage Shutdown Threshold as a Percent of ● 102 107 110 % Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (VDCIN–VCLP) DCIN Voltage Ramping Up from VCLP–0.05V ● 0 0.17 0.25 V Forward Regulation Voltage (VDCIN–VCLP) ● 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN–VCLP) ● –60 –25 mV INFET ON Clamping Voltage (VDCIN–VINFET) IINFET = 1µA ● 5 5.8 6.5 V INFET OFF Clamping Voltage (VDCIN–VINFET) IINFET = –25µA 0.25 V
Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLP-VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLP-VTGATE) CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLN-VTGATE) ITGATE = –1µA 100 mV VBGATE at Shutdown ITGATE = 1µA 100 mV 4100fc For more information www.linear.com/LTC4100 3
e lecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDCIN = 20V, VDD = 3.3V, VBAT = 12V unless otherwise noted. (Note 4) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Current Sense Amplifier, CA1
Input Bias Current into BAT Pin 11.66 µA CMSL CA1/I1 Input Common Mode Low ● 0 V CMSH CA1/I1 Input Common Mode High VDCIN ≤ 28V ● VCLN–0.2 V
Current Comparators ICMP and IREV
ITMAX Maximum Current Sense Threshold (VCSP–VBAT) VITH = 2.5V ● 140 165 200 mV ITREV Reverse Current Threshold (VCSP–VBAT) – 30 mV
Current Sense Amplifier, CA2
Transconductance 1 mmho Source Current Measured at ITH, VITH = 1.4V –40 µA Sink Current Measured at ITH, VITH = 1.4V 40 µA
Current Limit Amplifier
Transconductance 1.5 mmho VCLP Current Limit Threshold ● 93 100 107 mV ICLN CLN Input Bias Current 100 nA
Voltage Error Amplifier, EA
Transconductance 1 mmho Sink Current Measured at ITH, VITH = 1.4V 36 µA OVSD Overvoltage Shutdown Threshold as a Percent of ● 102 107 110 % Programmed Charger Voltage
Input P-Channel FET Driver (INFET)
DCIN Detection Threshold (VDCIN–VCLP) DCIN Voltage Ramping Up from VCLP–0.05V ● 0 0.17 0.25 V Forward Regulation Voltage (VDCIN–VCLP) ● 25 50 mV Reverse Voltage Turn-Off Voltage (VDCIN–VCLP) ● –60 –25 mV INFET ON Clamping Voltage (VDCIN–VINFET) IINFET = 1µA ● 5 5.8 6.5 V INFET OFF Clamping Voltage (VDCIN–VINFET) IINFET = –25µA 0.25 V
Oscillator
fOSC Regulator Switching Frequency 255 300 345 kHz fMIN Regulator Switching Frequency in Drop Out Duty Cycle ≥ 98% 20 25 kHz DCMAX Regulator Maximum Duty Cycle VCSP = VBAT 98 99 %
Gate Drivers (TGATE, BGATE)
VTGATE High (VCLP-VTGATE) ITGATE = –1mA 50 mV VBGATE High CLOAD = 3000pF 4.5 5.6 10 V VTGATE Low (VCLP-VTGATE) CLOAD = 3000pF 4.5 5.6 10 V VBGATE Low IBGATE = 1mA 50 mV TGATE Transition Time TGTR TGATE Rise Time CLOAD = 3000pF, 10% to 90% 50 110 ns TGTF TGATE Fall Time CLOAD = 3000pF, 10% to 90% 50 100 ns BGATE Transition Time BGTR BGATE Rise Time CLOAD = 3000pF, 10% to 90% 40 90 ns BGTF BGATE Fall Time CLOAD = 3000pF, 10% to 90% 40 80 ns VTGATE at Shutdown (VCLN-VTGATE) ITGATE = –1µA 100 mV VBGATE at Shutdown ITGATE = 1µA 100 mV 4100fc For more information www.linear.com/LTC4100 3