Datasheet OP284-EP (Analog Devices) - 4

OP284-EP Enhanced Product
VS = ±15.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V 100 μV OS −55°C ≤ T ≤ +125°C 200 μV A Input Bias Current I 80 450 nA B −55°C ≤ T ≤ +125°C 600 nA A Input Offset Current I −55°C ≤ T ≤ +125°C 50 nA OS A Input Voltage Range −15 +15 V Common-Mode Rejection Ratio CMRR V = −14.0 V to +14.0 V, −55°C ≤ T ≤ +125°C 86 90 dB CM A Large Signal Voltage Gain A R = 2 kΩ, −10 V ≤ V ≤ 10 V 150 1000 V/mV VO L OUT R = 2 kΩ, −55°C ≤ TA ≤ +125°C 75 V/mV L Offset Voltage Drift ΔV /ΔT 0.2 2.00 µV/°C OS Bias Current Drift ΔV /ΔT 150 pA/°C B OUTPUT CHARACTERISTICS Output Voltage High V I = 1.0 mA 14.8 V OH L Output Voltage Low V I = 1.0 mA −14.875 V OL L Output Current I ±10 mA OUT POWER SUPPLY Power Supply Rejection Ratio PSRR V = ±2.0 V to ±18 V, −55°C ≤ T ≤ +125°C 90 dB S A Supply Current/Amplifier I V = 0 V, −55°C ≤ T ≤ +125°C 2.0 mA SY OUT A V = ±18 V, −55°C ≤ T ≤ +125°C 2.25 mA S A DYNAMIC PERFORMANCE Slew Rate SR R = 2 kΩ 2.4 4.0 V/µs L Full Power Bandwidth BW 1% distortion, R = 2 kΩ, V = 29 V p-p 35 kHz p L OUT Settling Time t To 0.01%, 10 V step 4 µs S Gain Bandwidth Product GBP 4.25 MHz Phase Margin Φ 50 Degrees M NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.3 µV p-p n Voltage Noise Density e f = 1 kHz 3.9 nV/√Hz n Current Noise Density i 0.4 pA/√Hz n Rev. 0 | Page 4 of 13 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS PIN CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE