Datasheet PUMB9 - NXP TRANSISTOR, DIGITAL, DUAL, SOT-363 — Datenblatt

NXP PUMB9

Part Number: PUMB9

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, DIGITAL, DUAL, SOT-363

Simulation ModelSimulation Model

Specifications:

  • Collector-to-Emitter Breakdown Voltage: 50 V
  • DC Current Gain Min: 100
  • DC Current Gain: 5 mA
  • Full Power Rating Temperature: 25°C
  • Max Current Ic Continuous a: 100 A
  • Max Current Ic: 100 A
  • Max Power Dissipation Ptot: 300 mW
  • Mounting Type: SMD
  • Number of Pins: 6
  • Number of Transistors: 2
  • Package / Case: SOT-363
  • Resistance R1: 10 kOhm
  • Resistance R2: 47 kOhm
  • Transistor Case Style: SOT-363
  • Transistor Polarity: PNP
  • Transistor Type: Small Signal Digital
  • Voltage Vcbo: -50 V

RoHS: Yes