Datasheet PUMB9 - NXP TRANSISTOR, DIGITAL, DUAL, SOT-363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, DIGITAL, DUAL, SOT-363

Simulation Model

Specifications:

• Collector-to-Emitter Breakdown Voltage: 50 V
• DC Current Gain Min: 100
• DC Current Gain: 5 mA
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 100 A
• Max Current Ic: 100 A
• Max Power Dissipation Ptot: 300 mW
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 2
• Package / Case: SOT-363
• Resistance R1: 10 kOhm
• Resistance R2: 47 kOhm
• Transistor Case Style: SOT-363
• Transistor Polarity: PNP
• Transistor Type: Small Signal Digital
• Voltage Vcbo: -50 V

RoHS: Yes