Datasheet PMP5501V - NXP TRANSISTOR, DUAL, PNP, SOT-666 — Datenblatt

NXP PMP5501V

Part Number: PMP5501V

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, DUAL, PNP, SOT-666

data sheetDownload Data Sheet

Docket:
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
Rev.

03 -- 28 August 2009 Product data sheet
1. Product profile
1.1 General description

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 45 V
  • Collector Emitter Voltage Vces: -200 mV
  • Current Ic Continuous a Max: 100 mA
  • DC Current Gain Min: 200
  • DC Current Gain: 2 mA
  • Gain Bandwidth ft Min: 100 MHz
  • Gain Bandwidth ft Typ: 175 MHz
  • Mounting Type: SMD
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-666
  • Power Dissipation Pd: 200 mW
  • Power Dissipation Ptot Max: 200 mW
  • Power Dissipation per device Max: 300 mW
  • SMD Marking: ED
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-666
  • Transistor Polarity: PNP
  • Transistor Type: General Purpose
  • Voltage Vcbo: 45 V

RoHS: Yes