Datasheet PMD9002D - NXP TRANSISTOR, NPN/PNP, 50 V, SSOT-6 — Datenblatt

NXP PMD9002D

Part Number: PMD9002D

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, NPN/PNP, 50 V, SSOT-6

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Docket:
PMD9002D
MOSFET driver
Rev.

01 -- 20 November 2006 Product data sheet
1. Product profile
1.1 General description

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 45 V
  • Collector Emitter Voltage Vces: 150 mV
  • Current Ic Continuous a Max: 100 mA
  • DC Current Gain Min: 30
  • DC Current Gain: 20 mA
  • Mounting Type: SMD
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SSOT-6
  • Power Dissipation Pd: 290 mW
  • Power Dissipation Ptot Max: 290 mW
  • Resistance R1: 4.7 kOhm
  • Resistance R2: 4.7 kOhm
  • SMD Marking: 9C
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SSOT
  • Transistor Polarity: NPN / PNP
  • Transistor Type: General Purpose
  • Voltage Vcbo: 50 V

RoHS: Yes