Datasheet PUMZ2 - NXP TRANSISTOR, NPN, SOT-363 — Datenblatt

NXP PUMZ2

Part Number: PUMZ2

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-363

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Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 50 V
  • Collector Emitter Voltage Vces: -500 mV
  • Continuous Collector Current Ic Max: 150 mA
  • Current Ic Continuous a Max: 150 mA
  • DC Collector Current: 150 mA
  • DC Current Gain Min: 120
  • DC Current Gain: 250
  • Full Power Rating Temperature: 25°C
  • Gain Bandwidth ft Typ: 190 MHz
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-363
  • Power Dissipation Pd: 180 mW
  • Power Dissipation Ptot Max: 300 mW
  • Power Dissipation per device Max: 200 mW
  • SMD Marking: GZ
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-363
  • Transistor Polarity: NPN / PNP
  • Voltage Vcbo: 50 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • LICEFA - V11-7-6-10
  • LICEFA - V11-7