Datasheet PBSS2515VS - NXP TRANSISTOR, NPN, SOT-666 — Datenblatt

NXP PBSS2515VS

Part Number: PBSS2515VS

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-666

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Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 15 V
  • Collector Emitter Voltage Vces: 25 mV
  • Continuous Collector Current Ic Max: 500 mA
  • Current Ic Continuous a Max: 500 mA
  • DC Collector Current: 500 mA
  • DC Current Gain Min: 200
  • DC Current Gain: 200
  • Full Power Rating Temperature: 25°C
  • Gain Bandwidth ft Typ: 420 MHz
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-666
  • Power Dissipation Pd: 200 mW
  • Power Dissipation Ptot Max: 300 mW
  • Power Dissipation per device Max: 200 mW
  • SMD Marking: N9
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-666
  • Transistor Polarity: NPN
  • Voltage Vcbo: 15 V

RoHS: Yes