Datasheet BCV62B - NXP TRANSISTOR, DUAL, PNP, SOT-143B — Datenblatt

NXP BCV62B

Part Number: BCV62B

Detaillierte Beschreibung

Manufacturer: NXP

Description: TRANSISTOR, DUAL, PNP, SOT-143B

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Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 30 V
  • Collector Emitter Voltage Vces: 650 mV
  • Continuous Collector Current Ic Max: 100 mA
  • Current Ic @ Vce Sat: 100 A
  • Current Ic Continuous a Max: 100 mA
  • DC Collector Current: -100 mA
  • DC Current Gain Min: 100
  • DC Current Gain: 220
  • External Depth: 2.6 mm
  • External Length / Height: 1 mm
  • External Width: 2.9 mm
  • Gain Bandwidth ft Typ: 100 MHz
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 4
  • Number of Transistors: 2
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-143B
  • Power Dissipation Pd: 250 mW
  • Power Dissipation Ptot Max: 250 mW
  • SMD Marking: 3*P
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-143B
  • Transistor Polarity: NPN
  • Voltage Vcbo: 30 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • LICEFA - V11-7-6-10
  • LICEFA - V11-7