Datasheet SIR892DP-T1-E3 - Vishay MOSFET, N, SO-8 — Datenblatt

Vishay SIR892DP-T1-E3

Part Number: SIR892DP-T1-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
New Product
SiR892DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current Id: 50 A
  • Current Id Max: 30 A
  • Drain Source Voltage Vds: 25 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • On Resistance Rds(on): 3.2 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: PowerPAK
  • Power Dissipation Pd: 50 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 18 ns
  • Transistor Case Style: PowerPAK SO
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 25 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.6 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

Andere Namen:

SIR892DPT1E3, SIR892DP T1 E3