Datasheet SIE818DF-T1-E3 - Vishay MOSFET, N, POLAR PAK — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, N, POLAR PAK

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Docket:
SiE818DF
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
ID (A)a VDS (V) 75 RDS(on) ()e 0.0095 at VGS = 10 V 0.0125 at VGS = 4.5 V Silicon Limit 79 69 Package Qg (Typ.) Limit 60 60 33 nC

Specifications:

• Base Number: 818
• Continuous Drain Current Id: 79 A
• Current Id Max: 60 A
• Drain Source Voltage Vds: 75 V
• Mounting Type: SMD
• N-channel Gate Charge: 33nC
• Number of Pins: 10
• On Resistance Rds(on): 9.5 MOhm
• On State Resistance @ Vgs = 4.5V: 12.5 MOhm
• On State resistance @ Vgs = 10V: 9.5 MOhm
• Operating Temperature Range: -50°C to +150°C
• Package / Case: PolarPAK
• Power Dissipation Pd: 125 W
• Pulse Current Idm: 80 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2.1 V
• Transistor Case Style: PolarPAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 75 V
• Voltage Vgs Max: 2.1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1.5 V

RoHS: Y-Ex

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SIE818DFT1E3, SIE818DF T1 E3