Datasheet SI7866ADP-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Vishay SI7866ADP-T1-GE3

Part Number: SI7866ADP-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

  • Continuous Drain Current Id: 40 A
  • Drain Source Voltage Vds: 20 V
  • On Resistance Rds(on): 3 MOhm
  • Power Dissipation Pd: 5.4 W
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 800 mV
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7866ADPT1GE3, SI7866ADP T1 GE3