Datasheet SI7820DN-T1-GE3 - Vishay N CH MOSFET, 200 V, 2.6 A, POWERPAK — Datenblatt

Vishay SI7820DN-T1-GE3

Part Number: SI7820DN-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET, 200 V, 2.6 A, POWERPAK

data sheetDownload Data Sheet

Docket:
Si7820DN
Vishay Siliconix
N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 200 RDS(on) () 0.240 at VGS = 10 V 0.250 at VGS = 6 V ID (A) 2.6 2.5 Qg (Typ.) 12.1

Specifications:

  • Continuous Drain Current Id: 2.6 A
  • Drain Source Voltage Vds: 200 V
  • On Resistance Rds(on): 250 MOhm
  • Rds(on) Test Voltage Vgs: 6 V
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Andere Namen:

SI7820DNT1GE3, SI7820DN T1 GE3