Datasheet SI4446DY-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Vishay SI4446DY-T1-GE3

Part Number: SI4446DY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

  • Continuous Drain Current Id: 3.9 A
  • Drain Source Voltage Vds: 40 V
  • On Resistance Rds(on): 33 MOhm
  • Power Dissipation Pd: 1.1 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1.6 V
  • Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI4446DYT1GE3, SI4446DY T1 GE3