Datasheet SI4446DY-T1-E3 - Vishay MOSFET, N CH, 40 V, 3.9 A, POWERPAK — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, N CH, 40 V, 3.9 A, POWERPAK

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Specifications:

• Continuous Drain Current Id: 3.9 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 8
• On Resistance Rds(on): 0.033 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.1 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• RoHS: Y-Ex

Andere Namen:

SI4446DYT1E3, SI4446DY T1 E3