Datasheet SI3458BDV-T1-GE3 - Vishay N CH MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: N CH MOSFET

Specifications:

• Continuous Drain Current Id: 3.2 A
• Drain Source Voltage Vds: 60 V
• On Resistance Rds(on): 82 MOhm
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI3458BDVT1GE3, SI3458BDV T1 GE3