Datasheet SQR50N03-06P-GE3 - Vishay MOSFET, N CH, W DIODE, 30 V, 84 A, DPAK — Datenblatt

Vishay SQR50N03-06P-GE3

Part Number: SQR50N03-06P-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 30 V, 84 A, DPAK

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Docket:
SQR50N03-06P
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration

Specifications:

  • Continuous Drain Current Id: 84 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 3
  • On State Resistance: 0.0053 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 88 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SQR50N0306PGE3, SQR50N03 06P GE3