Datasheet SQJ412EP-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 40 V, 32 A, POPAK8L — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 40 V, 32 A, POPAK8L

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Docket:
SQJ412EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration

Specifications:

• Continuous Drain Current Id: 32 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 8
• On State Resistance: 0.0034 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 83 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SQJ412EPT1GE3, SQJ412EP T1 GE3