Datasheet SQD50N03-06P-GE3 - Vishay MOSFET, N CH, W DIODE, 30 V, 50 A, TO-252 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 30 V, 50 A, TO-252

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Docket:
SQD50N03-06P
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.0060 0.0085 50 Single

Specifications:

• Continuous Drain Current Id: 50 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 3
• On State Resistance: 0.0047 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 83 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SQD50N0306PGE3, SQD50N03 06P GE3