Datasheet SQD23N06-31L-GE3 - Vishay MOSFET, N CH, W DIODE, 60 V, 23 A, TO-252 — Datenblatt
Part Number: SQD23N06-31L-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 60 V, 23 A, TO-252
Docket:
SQD23N06-31L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.031 0.045 23 Single
Specifications:
- Continuous Drain Current Id: 23 A
- Drain Source Voltage Vds: 60 V
- Number of Pins: 3
- On State Resistance: 0.024 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 37 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-252
- Transistor Polarity: N Channel
- Voltage Vgs Max: 60 V
RoHS: Yes
Andere Namen:
SQD23N0631LGE3, SQD23N06 31L GE3