Datasheet SQD23N06-31L-GE3 - Vishay MOSFET, N CH, W DIODE, 60 V, 23 A, TO-252 — Datenblatt

Vishay SQD23N06-31L-GE3

Part Number: SQD23N06-31L-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 60 V, 23 A, TO-252

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Docket:
SQD23N06-31L
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.031 0.045 23 Single

Specifications:

  • Continuous Drain Current Id: 23 A
  • Drain Source Voltage Vds: 60 V
  • Number of Pins: 3
  • On State Resistance: 0.024 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 37 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 60 V

RoHS: Yes

Andere Namen:

SQD23N0631LGE3, SQD23N06 31L GE3