Datasheet SQ4840EY-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 40 V, 20.7 A, SO8 — Datenblatt
Part Number: SQ4840EY-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 40 V, 20.7 A, SO8
Docket:
SQ4840EY
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 0.009 0.012 20.7 Single
Specifications:
- Continuous Drain Current Id: 20.7 A
- Drain Source Voltage Vds: 40 V
- Number of Pins: 8
- On State Resistance: 0.0075 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 7.1 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Andere Namen:
SQ4840EYT1GE3, SQ4840EY T1 GE3