Datasheet SQ2360EES-T1-GE3 - Vishay MOSFET, N CH, DI & ESD, 60 V, 4.4 A, SOT23 — Datenblatt
Part Number: SQ2360EES-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, N CH, DI & ESD, 60 V, 4.4 A, SOT23
Docket:
SQ2360EES
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
Specifications:
- Continuous Drain Current Id: 4.4 A
- Drain Source Voltage Vds: 60 V
- Number of Pins: 3
- On State Resistance: 0.058 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 3 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-236
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Andere Namen:
SQ2360EEST1GE3, SQ2360EES T1 GE3