Datasheet SIHP12N50C-E3 - Vishay MOSFET, N CH, DIODE, 500 V, 12 A, TO-220AB — Datenblatt

Vishay SIHP12N50C-E3

Part Number: SIHP12N50C-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 500 V, 12 A, TO-220AB

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Docket:
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.

RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

Specifications:

  • Current Id Max: 12 A
  • Drain Source Voltage Vds: 500 V
  • Number of Pins: 3
  • On State Resistance: 0.46 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 208 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 30 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • MULTICORE (SOLDER) - 1399075-M

Andere Namen:

SIHP12N50CE3, SIHP12N50C E3