Datasheet SI7860DP-T1-E3 - Vishay TRANSISTOR, MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: TRANSISTOR, MOSFET

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Docket:
Si7860DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.008 at VGS = 10 V 0.011 at VGS = 4.5 V ID (A) 18 15

Specifications:

• Continuous Drain Current Id: 18 A
• Current Id Max: 18 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 8 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC-8
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

Andere Namen:

SI7860DPT1E3, SI7860DP T1 E3