Datasheet SI4896DY-T1-E3 - Vishay MOSFET, P, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SO-8

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Docket:
Si4896DY
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 80 RDS(on) () 0.0165 at VGS = 10 V 0.022 at VGS = 6.0 V ID (A) 9.5 8.3

Specifications:

• Continuous Drain Current Id: 9.5 A
• Current Id Max: 9.5 A
• Drain Source Voltage Vds: 80 V
• Number of Pins: 8
• On State Resistance: 16.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC-8
• Power Dissipation Pd: 1.56 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 80 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Roth Elektronik - RE932-01

Andere Namen:

SI4896DYT1E3, SI4896DY T1 E3