Datasheet SI4442DY-T1-E3 - Vishay TRANSISTOR, MOSFET — Datenblatt

Vishay SI4442DY-T1-E3

Part Number: SI4442DY-T1-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: TRANSISTOR, MOSFET

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Docket:
Si4442DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0045 at VGS = 10 V 0.005 at VGS = 4.5 V 0.0075 at VGS = 2.5 V ID (A) 22 19 17

Specifications:

  • Continuous Drain Current Id: 22 A
  • Current Id Max: 22 A
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • Number of Pins: 8
  • On Resistance Rds(on): 4.5 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation: 3.5 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Max: 1.5 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

Andere Namen:

SI4442DYT1E3, SI4442DY T1 E3