Datasheet SI2336DS-T1-GE3 - Vishay MOSFET, N CH, 30 V, 5.2 A, DIODE, SOT23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, 30 V, 5.2 A, DIODE, SOT23

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Docket:
New Product
Si2336DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 4.3 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 3
• On State Resistance: 0.034 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.25 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vgs Max: 8 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL

Andere Namen:

SI2336DST1GE3, SI2336DS T1 GE3