Datasheet SI2309DS - Vishay MOSFET, P, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SOT-23

Simulation Model

Specifications:

• Continuous Drain Current Id: 1.25 A
• Current Id Max: -1.25 A
• Current Temperature: 25°C
• Device Marking: SI2309DS
• Drain Source Voltage Vds: 60 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 340 MOhm
• On State Resistance: 340 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 8 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: A9
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -1 V

RoHS: Yes

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