Datasheet SIB419DK-T1-GE3 - Vishay MOSFET, P, PPAK SC-75 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, PPAK SC-75

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Docket:
New Product
SiB419DK
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: 9 A
• Current Id Max: -9 A
• Drain Source Voltage Vds: -12 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 6
• On State Resistance: 60 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-75
• Power Dissipation Pd: 13.1 W
• Rds(on) Test Voltage Vgs: 8 V
• Rise Time: 42 ns
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SC-75
• Transistor Polarity: P Channel
• Voltage Vds Typ: 12 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1 V
• Voltage Vgs th Min: 0.4 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

SIB419DKT1GE3, SIB419DK T1 GE3