Datasheet SIB417DK-T1-GE3 - Vishay MOSFET, P, PPAK SC-75 — Datenblatt
Part Number: SIB417DK-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, P, PPAK SC-75
Docket:
New Product
SiB417DK
Vishay Siliconix
P-Channel 1.2-V (G-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 9 A
- Current Id Max: -9 A
- Drain Source Voltage Vds: -8 V
- Junction Temperature Tj Max: 150°C
- Mounting Type: SMD
- Number of Pins: 6
- On State Resistance: 52 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SC-75
- Power Dissipation Pd: 13 W
- Rds(on) Test Voltage Vgs: 5 V
- Rise Time: 31 ns
- Threshold Voltage Vgs Typ: -1 V
- Transistor Case Style: SC-75
- Transistor Polarity: P Channel
- Voltage Vds Typ: 8 V
- Voltage Vgs Max: -1 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Max: 1 V
- Voltage Vgs th Min: 0.35 V
RoHS: Yes
Accessories:
- Panasonic - EYGA091203SM
- Panasonic - EYGA121807A
Andere Namen:
SIB417DKT1GE3, SIB417DK T1 GE3