Datasheet SI2319DS-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Vishay SI2319DS-T1-GE3

Part Number: SI2319DS-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

  • Continuous Drain Current Id: -2.3 A
  • Drain Source Voltage Vds: -40 V
  • On Resistance Rds(on): 65 MOhm
  • Power Dissipation Pd: 750 mW
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2319DST1GE3, SI2319DS T1 GE3