Datasheet SI2305DS-T1-GE3 - Vishay P CH MOSFET — Datenblatt

Vishay SI2305DS-T1-GE3

Part Number: SI2305DS-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CH MOSFET

Specifications:

  • Continuous Drain Current Id: -3.5 A
  • Drain Source Voltage Vds: -8 V
  • On Resistance Rds(on): 44 MOhm
  • Power Dissipation Pd: 1.25 W
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Threshold Voltage Vgs Typ: -800 mV
  • Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI2305DST1GE3, SI2305DS T1 GE3