IRFD9020
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) • Dynamic dV/dt rating -60 RDS(on) () VGS = -10 V • Repetitive avalanche rated 0.28 Qg max. (nC) 19 • For automatic insertion Qgs (nC) 5.4 • End stackable 11 • P-channel Qgd (nC)
Configuration • 175 °C operating temperature Single • Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 S HVMDIP DESCRIPTION
G S Third generation power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W. G D D
P-Channel MOSFET ORDERING INFORMATION
Package HVMDIP Lead (Pb)-Free IRFD9020PbF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 VGS at -10 V Continuous Drain Current
Pulsed Drain Current TA = 25 °C
TA = 100 °C a ID
IDM Linear Derating Factor
Single Pulse Avalanche Energy b EAS UNIT …