Datasheet SQJ463EP-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 40 V, 30 A, POPAK8L — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W DIODE, 40 V, 30 A, POPAK8L

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Docket:
SPICE Device Model SQJ463EP
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS.

The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

Specifications:

• Continuous Drain Current Id: -18 A
• Drain Source Voltage Vds: -40 V
• Number of Pins: 8
• On State Resistance: 0.007 Ohm
• Operating Temperature Range: -55°C to +125°C
• Power Dissipation Pd: 1.9 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Andere Namen:

SQJ463EPT1GE3, SQJ463EP T1 GE3