Datasheet SQ4431EY-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 30 V, 10.8 A, SO8 — Datenblatt

Vishay SQ4431EY-T1-GE3

Part Number: SQ4431EY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W DIODE, 30 V, 10.8 A, SO8

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Docket:
SQ4431EY
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 30 0.030 0.052 - 10.8 Single

Specifications:

  • Continuous Drain Current Id: -10.8 A
  • Drain Source Voltage Vds: -30 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.02 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 6 W
  • Rds(on) Test Voltage Vgs: -10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Voltage Vgs Max: -20 V

RoHS: Yes

Accessories:

  • Electrolube - HTS35SL
  • Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SQ4431EYT1GE3, SQ4431EY T1 GE3