Datasheet SQ4431EY-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 30 V, 10.8 A, SO8 — Datenblatt
Part Number: SQ4431EY-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, P CH, W DIODE, 30 V, 10.8 A, SO8
Docket:
SQ4431EY
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 30 0.030 0.052 - 10.8 Single
Specifications:
- Continuous Drain Current Id: -10.8 A
- Drain Source Voltage Vds: -30 V
- Number of Pins: 8
- On Resistance Rds(on): 0.02 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation: 6 W
- Rds(on) Test Voltage Vgs: -10 V
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
- Voltage Vgs Max: -20 V
RoHS: Yes
Accessories:
- Electrolube - HTS35SL
- Fischer Elektronik - FK 244 13 D2 PAK
Andere Namen:
SQ4431EYT1GE3, SQ4431EY T1 GE3