Datasheet SQ4401EY-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 40 V, 17.3 A, SO8 — Datenblatt

Vishay SQ4401EY-T1-GE3

Part Number: SQ4401EY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W DIODE, 40 V, 17.3 A, SO8

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Docket:
SQ4401EY
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 40 0.014 0.023 - 17.3 Single

Specifications:

  • Continuous Drain Current Id: -17.3 A
  • Drain Source Voltage Vds: -40 V
  • Number of Pins: 8
  • On State Resistance: 0.011 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 7.14 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Voltage Vgs Max: -20 V

RoHS: Yes

Andere Namen:

SQ4401EYT1GE3, SQ4401EY T1 GE3