Datasheet SQ2319ES-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 40 V, 4.6 A, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W DIODE, 40 V, 4.6 A, SOT-23

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Docket:
New Product
SQ2319ES
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY

Specifications:

• Continuous Drain Current Id: -4.6 A
• Drain Source Voltage Vds: -40 V
• Number of Pins: 3
• On State Resistance: 0.061 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 3 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: TO-236
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Andere Namen:

SQ2319EST1GE3, SQ2319ES T1 GE3