Datasheet SI4463BDY-T1-E3 - Vishay MOSFET, P, SOIC — Datenblatt

Vishay SI4463BDY-T1-E3

Part Number: SI4463BDY-T1-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SOIC

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Specifications:

  • Base Number: 4463
  • Continuous Drain Current Id: 9.8 A
  • Current Id Max: 13.7 A
  • Drain Source Voltage Vds: 20 V
  • Mounting Type: SMD
  • Number of Pins: 8
  • On State Resistance @ Vgs = 2.5V: 20 MOhm
  • On State Resistance @ Vgs = 4.5V: 14 MOhm
  • On State Resistance: 110 MOhm
  • On State resistance @ Vgs = 10V: 11 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • P Channel Gate Charge: 37nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.5 W
  • Rds(on) Test Voltage Vgs: 12 V
  • Threshold Voltage Vgs Typ: -1.4 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -20 V
  • Voltage Vgs Max: -1.4 V
  • Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A
  • Roth Elektronik - RE932-01

Andere Namen:

SI4463BDYT1E3, SI4463BDY T1 E3